WFY3P02 WFY3P02 WFY3P02 WFY3P02 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . t t t t rench rench rench rench power power power power mosfet mosfet mosfet mosfet ? ? ? ? 20 20 20 20 v v v v , , , , si si si si n n n n gle gle gle gle p p p p ? ? ? ? channel, channel, channel, channel, so so so so t t t t ? ? ? ? 23 23 23 23 features -3.2a, -20 v , r ds(on) (max 85m )@ v gs =-4. 5 v ? 1. 5 v rated for low v o ltage gate drive sot-23 sur f ace mount f or small footprint sing l e pulse a v al anche energy rated halogen-free general d e scription this po w er mosfet is produced using winsemi s advanced mos technolog y . this latest technology has been especial l y designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. th i s devices is specially w ell suited for load/po w er management f or portables and computing, charging c i rcuits and battery protection absolute maximum ratings d d d d g g g g s s s s so so so so t t t t - - - - 23 23 23 23 marking : p02ym y :year ,m :months symbol parameter v a lue units v dss drain source v o ltage -20 v i d continuous drain current(note 1) steady state t c =25 ? 2.4 a t c = 85 -1.7 t 10s t c =25 -3.2 p d t o t a l po w er dissipation(note 1) steady state t c =25 0.73 w t 10s 1.25 i d continuous drain current(note 2) steady state t c =25 -1.8 a t c = 85 -1.3 p d t o t a l po w er dissipation(note 2) t c=25 0.42 w i dm drain current pulsed t=10s -7.5 a v gs gate to source v o ltage 8 v esd esd capabil i ty (note 3) c=100p f , r s = 1500 225 v t j, t stg junction and storage t e mperature -55~150 t l ma x imum lead t e mperature f or soldering purposes 260 ma x imum ratings are those values be y o n d w h ich device damage can occu r . ma x imum ratings appli e d to the device are individ u al stress limit values (not normal operating conditi o ns) and are not valid simultaneousl y . if t hese limits are e x ceed e d, device functional operation is not implied, damage may occur and reliab i li t y may be a ffe cted. thermal characte r istics symbol parameter v a lue units min t y p max r qja thermal resistance, junction-to-ambient(note 1) - - 170 /w r qja thermal resistance, junction-to-ambient(note 1) 1 1 0 /w r qja thermal resistance, junction-to-ambient(note 2) 300 /w note 1: surface ? mounted on fr4 board using 1 in sq pad si z e (cu area = 1.127 in sq [1 o z ] including traces) note 2: surface ? mounted on fr4 board using the minimum recommend e d pad si z e. note 3: esd rating information: hbm class 0 re v. a ma r .20 10 p02-1
WFY3P02 WFY3P02 WFY3P02 WFY3P02 2 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance char a cteristics symbol test condition min type max unit continuous drain reverse current i dr - - - -2.4 a pulse drain reverse current i dr p - - - -7.5 a for w a r d voltage (diode) v dsf i dr = -2.4a, v gs = 0 v - -0.82 -1.2 v reverse recovery time t rr i dr = -2.4a, v gs = 0 v, di dr / dt = 100 a / s - 12.8 15 ns charge t im e t a 9.9 ns discharge t i me t b 3.0 ns reverse recovery charge q rr - 1008 - c electrical characte r istics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage curren t ( note 4) i gss v gs = 8 v, v ds = 0 v - - 100 na drain cut ? o f f curren t ( note 4) i dss v ds = -16 v, v gs = 0 v - - -1 a drain ? source breakdo w n voltage v (br)dss i d = - 250 a, v gs = 0 v -20 - - v gate threshold voltage v gs(th) v ds = v ds i d =-250 a -0.40 -0.72 -1.5 v drain ? source on resistance r ds(on) v gs = ? 4.5 v , i d = ? 1.6 a - 70 85 m ? v gs = ? 2.5 v , i d = ? 1 . 3 a 90 120 v gs = ? 1.8 v , i d = ? 0.9 a 112 200 for w a r d transconductance gfs v ds = ? 5.0 v , i d = ? 2.3 a - 75 - s input capacitance c iss v ds = -10 v, v gs = 0 v, f = 1 mhz - 675 - pf reverse trans f er capacitance c rss - 75 - output capacitance c oss - 100 - s w itching time (note 5) rise time tr v gs = ? 4.5 v , v ds = ? 10 v , i d = ? 1.6 a, r g = 6.0 - 12.6 - ns turn ? on time ton - 7.5 - fall time tf - 21.0 - turn ? off time toff - 30.2 - total gate charge (gat e ? source plus gate ? drain) qg v gs = ? 4.5 v , v ds = ? 10 v , i d = ? 1.6 a - 7.5 8.5 nc gate ? source charge qgs - 1.2 - gate ? drain ( miller ) charge qgd - 2.2 - reverse recovery charge r g - 6.5 - sourc e ? drain ratings and characte r istics (ta = 25 c) note 4: pulse t e s t : pulse width 30 0 s, duty c y cle 3 2%. note 5: s w itc h ing characteristics are indepe n d e nt of operating junction temperature. this transistor is an electrostatic sensitive device please handle w i th caution
WFY3P02 WFY3P02 WFY3P02 WFY3P02 3 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. fig. fig. fig. 1 1 1 1 on-state on-state on-state on-state characteristics characteristics characteristics characteristics fig.2 fig.2 fig.2 fig.2 t t t t r r r r a a a a nsfer nsfer nsfer nsfer current current current current characteristics characteristics characteristics characteristics fig.3 fig.3 fig.3 fig.3 on on on on ? ? ? ? resistance resistance resistance resistance vs. vs. vs. vs. drain drain drain drain current current current current and and and and t t t t e e e e mperature mperature mperature mperature fig.5 fig.5 fig.5 fig.5 on-resistance on-resistance on-resistance on-resistance v v v v a a a a riation riation riation riation vs vs vs vs junction junction junction junction t t t t e e e e mperature mperature mperature mperature fig.4 fig.4 fig.4 fig.4 diode diode diode diode for for for for w w w w a a a a rd rd rd rd v v v v o o o o ltage ltage ltage ltage vs. vs. vs. vs. current current current current fig.6 fig.6 fig.6 fig.6 gate gate gate gate charge charge charge charge characteristics characteristics characteristics characteristics
WFY3P02 WFY3P02 WFY3P02 WFY3P02 4 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 fig.7 fig.7 fig.7 resistive resistive resistive resistive s s s s w w w w i i i i tching tching tching tching t t t t i i i i me me me me v v v v a a a a riation riation riation riation vs. vs. vs. vs. gate gate gate gate resistance resistance resistance resistance fig.9 fig.9 fig.9 fig.9 drain drain drain drain ? ? ? ? to to to to ? ? ? ? source source source source leakage leakage leakage leakage current current current current vs. vs. vs. vs. v v v v o o o o ltage ltage ltage ltage fig.8 fig.8 fig.8 fig.8 maximum maximum maximum maximum drain drain drain drain current current current current vs vs vs vs case case case case t t t t e e e e mperature mperature mperature mperature fig.10 fig.10 fig.10 fig.10 on on on on ? ? ? ? resistance resistance resistance resistance vs. vs. vs. vs. drain drain drain drain current current current current and and and and t t t t e e e e mperature mperature mperature mperature
WFY3P02 WFY3P02 WFY3P02 WFY3P02 5 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance so so so so t t t t - - - - 23 23 23 23 package package package package dimension dimension dimension dimension
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